A mature technology at mass production level!

Mercury Cadmium Telluride (HgCdTe/MCT)technology can be used to develop IR detectors in the 1 - 3 µm (SWIR), 3 - 5 µm (MWIR) and 8 - 12 µm (LWIR) atmospheric transmission windows. Sofradir uses an MCT process for second generation IR detector production that was transferred from the Commissariat à l’Energie Atomique and the Laboratoire Infrarouge (CEA-LETI/LIR) in 1987. On-going research and development carried out between Sofradir and LETI/LIR, allows Sofradir to offer world-class, high performance IR detectors.

The key advantages of this technology are:
  • Large MCT (HgCdTe) wafer size and quality, up to 4-inch wafers, enabling larger format Focal Planar Arrays (FPA).
  • A silicon-like ion implantation process that is high yield and proficient at controlling the pixel diodes and accuracy of the indium bump positioning.
  • A unique hybridization technology, which is flexible and enables the manufacturing of QWIP detectors as well as InGaAs or InSb based detectors.
  • A small pitch technology for higher resolution and greater cost reductions.


Third-generation IR detectors available soon!

What is called third-generation is a new class of IR detector. It is one that represents a true breakthrough in system performance and offers increased identification range, increased reliability, fewer operating constraints and at a lower price.

MCT remains the key technology for new developments and is in the best position to meet the performance and enhanced feature challenges of third generation IR detectors. Competing technologies, such as Indium Antimonide (Insb), are unable to match Sofradir’s MCT technology to operate the FPA at high temperatures (90° K- 110° K), which is important in decreasing the powerload on the cryocooler. Competitors are unable to develop IR detectors with a small pitch (15 µm). They follow Sofradir’s lead toward miniaturization.

To ensure the success of third-generation IR detectors, SOFRADIR and LETI/CEA (LIR) have set up a joint laboratory (DEFIR). DEFIR optimizes the skills and resources of researchers from both organizations, who collaborate on R&D programs. One such program involves the silicon readout circuit, a critical element for third-generation performance and new on-focal-plane functions.