InGaAs photodetectors are based on the band-to-band absorption mechanism, allowing detection in the SWIR spectrum [0.9µm; 1.7µm] with an optional visible extension down to 0.4µm.
The heterostructure, grown lattice-matched on InP substrates (4’’) is specially designed to optimize the component performances: dark current, quantum efficiency and modulation transfer function.


 Uncooled technology 

  • Large production capacity
  • SWIR [ 0.9µm ; 1.7µm] or VisSWIR [0.4µm ; 1.7µm]
  • High sensitivity


SWIR detection band benefits from natural (sun, night glow, thermal radiation) or artificial (eye safe lasers) photons sources combined to low atmospheric absorption and specific contrast compared to visible wavelengths. 

Initially developed for telecommunications components, InGaAs material appears as a good candidate to satisfy SWIR detection needs. Since 2006, InGaAs imaging had been under study at Alcatel-Thales III-Vlab. In 2013, the transfer to Sofradir has allowed to give an industrial dimension to the production activity.

Thanks to the experience acquired after these several years of development and production, well mastered, stabilized and reliable processes have been set up to put on the market high performances SWIR modules. 

This makes our InGaAs technology particularly attractive to answer the needs of a large range of applications such as defense and security (night vision, active imaging), space (earth observation), transport (automotive safety) or industry (non destructive process control).


Download InGaAs chronology